DE150-101N09A rfpowermosfet v dss = 100v i d25 = 9.0a r ds(on) 0.16 p dc = 200w symbol testconditions maximumratings v dss t j =25cto150c 100 v v dgr t j =25cto150c;r gs =1m 100 v v gs continuous 20 v v gsm transient 30 v i d25 t c =25c 9.0 a i dm t c =25c,pulsewidthlimitedbyt jm 54 a i ar t c =25c 14 a e ar t c =25c 7.5 mj dv/dt i s i dm ,di/dt ?100a/ s,v dd v dss , t j 150c,r g =0.2 5.5 v/ns i s =0 >200 v/ns p dc 200 w p dhs t c =25c derate4.4w/cabove25c 80 w p damb t c =25c 3.5 w r thjc 0.74 c/w r thjhs 1.50 c/w symbol testconditions characteristicvalues min. typ. max. v dss v gs =0v,i d =3ma 100 v v gs(th) v ds =v gs ,i d =4ma 2 2.8 v i gss v gs =20v dc ,v ds =0 100 na i dss v ds =0.8v dss t j =25c v gs =0t j =125c 25 250 a a r ds(on) v gs =15v,i d =0.5i d25 pulsetest,t 300 s,dutycycled 2% 0.16 g fs v ds =15v,i d =0.5i d25 ,pulsetest 2.5 3.0 s t j 55 +175 c t jm 175 c t stg 55 +175 c t l 1.6mm(0.063in)fromcasefor10s 300 c weight 2 g t j =25cunlessotherwisespecified features ? isolatedsubstrate ? highisolationvoltage(>2500v) ? excellentthermaltransfer ? increasedtemperatureandpower cyclingcapability ? ixysadvancedlowq g process ? lowgatechargeandcapacitances ? easiertodrive ? fasterswitching ? lowr ds(on) ? verylowinsertioninductance(<2nh) ? noberylliumoxide(beo)orother hazardousmaterials advantages ? optimizedforrfandhighspeed switchingatfrequenciesto>100mhz ? easytomountnoinsulatorsneeded ? highpowerdensity nchannelenhancementmode lowq g andr g highdv/dt nanosecondswitching idealforclassc,d,&eapplications drain sg1 sg2 gate sd1 sd2
DE150-101N09A rfpowermosfet symbol testconditions characteristicvalues min. typ. max. r g 5 c iss 700 pf c oss v gs =0v,v ds =0.8v dss(max) , f=1mhz 200 pf c rss 30 pf c stray backmetaltoanypin 16 pf t d(on) 4 ns t on v gs =15v,v ds =0.8v dss i d =0.5i dm r g =0.2 (external) 4 ns t d(off) 4 ns t off 4 ns q g(on) 22 nc q gs v gs =10v,v ds =0.5v dss i d =0.5i d25 ,ig=3ma 3.4 nc q gd 9.1 nc ( t j =25cunlessotherwisespecified ) sourcedraindiode ( t j =25cunlessotherwisespecified ) characteristicvalues symbol testconditions min. typ. max. i s v gs =0v 9.0 a i sm repetitive;pulsewidthlimitedbyt jm 54 a v sd i f =i s ,v gs =0v, pulsetest,t 300 s,dutycycle 2% 1.5 v t rr 300 ns ixysrfreservestherighttochangelimits,testc onditionsanddimensions. ixysrfmosfetsarecoveredbyoneormoreofthef ollowingu.s.patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5 ,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5 ,486,715 5,381,025 5,640,045 caution:operationatorabovethemaximumratings valuesmayimpactdevicereliabilityorcauseperma nentdamagetothedevice. informationinthisdocumentisbelievedtobeaccu rateandreliable . ixysrfreservestherighttomakechangestoinform ationpub lishedinthisdocumentatanytimeandwithoutnot ice. fordetaileddevicemountingandinstallationinstr uctions,seethe device installation & mounting instructions technicalnoteonthe ixysrfwebsiteat; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_ series_mosfet_installation_instructions.pdf
DE150-101N09A rfpowermosfet v ds vs.capacitance 1 10 100 1000 10000 0 10 20 30 40 50 60 70 80 v ds voltage(v) capacitance(pf) typicaltransfercharacteristics v ds =30vpw=20s 0 5 10 15 20 25 30 35 40 45 50 55 3.5 4.5 5.5 6.5 7.5 8.5 9.5 v gs ,gatetosourcevoltage(v) i d ,draincurrent(a) extendedtypicaloutputcharacteristics 0 5 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 v ds ,draintosourcevoltage(v) i d ,draincurrnet(a) typicaloutputcharacteristics 0 5 10 15 20 0 5 10 15 20 25 30 35 40 45 50 v ds ,draintosourcevoltage(v) i d ,draincurrnet(a) gatechargevs.gatetosourcevoltage v ds =50vi d =4.5a 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 gatecharge(nc) g atetosourcevoltage(v) fig.1 fig.2 fig.3 fig.4 fig.5 top10v 9v 8v 7v 6.5v 6v 5.5v 5v 4.5v bottom4v 4.5v 4v 5.5v 5v 6v 6.5v 7v to 10v c iss c oss c rss
DE150-101N09A rfpowermosfet fig.6packagedrawing source source source source gate drain
DE150-101N09A rfpowermosfet 101n09adeseriesspicemodel thedeseriesspicemodelisillustratedinfigure 7.themodelisanexpansionof thespicelevel3mosfetmodel.itincludesthestr ayinductivetermsl g ,l s andl d . rdisther ds(on) ofthedevice,rdsistheresistiveleakageterm. theoutputcapaci tance,c oss ,andreversetransfercapacitance,c rss aremodeledwithreversedbiased diodes.thisprovidesavaractortyperesponsenece ssaryforahighpowerdevice model.theturnondelayandtheturnoffdelayare adjustedviaronandroff. figure7deseriesspicemodel thisspicemodelmaybedownloadedasatextfilef romtheixysrfwebsiteat http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de150101n09a.html netlist: *sym=powmosn .subckt101n09a102030 *terminals:dgs *100volt9amp.16ohmnchannelpowermosfet 10302001 m11233dmosl=1uw=1u ron561.5 don62d1 rof57.2 dof27d1 d1crs28d2 d2crs18d2 cgs23.7n rd41.16 dcos31d3 rds135.0meg ls330.1n ld1041n lg2051n .modeldmosnmos(level=3vto=3.0kp=9.0) .modeld1d(is=.5fcjo=1pbv=100m=.5vj=.6tt=1n) .modeld2d(is=.5fcjo=1100pbv=100m=.5vj=.6tt= 1nrs=10m) .modeld3d(is=.5fcjo=300pbv=100m=.3vj=.4tt=4 00nrs=10m) .ends an ixys company 2401researchblvd.,suite108 fortcollins,cousa80526 9704931901fax:9704931903 email:sales@ixyscolorado.com web:http://www.ixyscolorado.com doc#92000242rev5 ?2009ixysrf
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